DISCRETE SEMICONDUCTORS DATA SHEET BAS321 General purpose diode Product data sheet Supersedes data of 1999 Feb 09 2004 Jan 26
NXP Semiconductors Product data sheet General purpose diode BAS321 FEATURES PINNING • Small plastic SMD package PIN • Switching speed: max. 50 ns 1 cathode • General application 2 anode DESCRIPTION • Continuous reverse voltage: max. 200 V • Repetitive peak reverse voltage: max. 250 V • Repetitive peak forward current: max. 625 mA. handbook, halfpage 1 2 APPLICATIONS • General purpose switching in e.g. surface mounted circuits.
NXP Semiconductors Product data sheet General purpose diode BAS321 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage CONDITIONS MAX. UNIT see Fig.3 reverse current IF = 100 mA 1 V IF = 200 mA 1.25 V VR = 200 V 100 nA VR = 200 V; Tj = 150 °C 100 µA see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.
NXP Semiconductors Product data sheet General purpose diode BAS321 GRAPHICAL DATA MBK927 300 MBG384 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 100 200 (1) 0 0 0 50 100 150 200 Tamb (°C) 1 (3) 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.
NXP Semiconductors Product data sheet General purpose diode BAS321 MBG381 2 10halfpage handbook, Cd (pF) IR (µA) 0.8 10 (1) 1 (2) 0.6 1 10 MBG447 1.0 handbook, halfpage 0.4 10 2 100 0 Tj (oC) 0.2 0 200 2 (1) VR = VRmax; maximum values. (2) VR = VRmax; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. MBK926 300 handbook, halfpage VR (V) 200 100 0 0 Fig.
NXP Semiconductors Product data sheet General purpose diode BAS321 handbook, full pagewidth tr tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 3 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time tr = 0.35 ns; Circuit capacitance C ≤ 1 pF (oscilloscope input + parasitic capacitance) Fig.
NXP Semiconductors Product data sheet General purpose diode BAS321 PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1.
NXP Semiconductors Product data sheet General purpose diode BAS321 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
