Datasheet

2003 Mar 20 3
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BAS19 − 120 V
BAS20 − 200 V
BAS21 − 250 V
V
R
continuous reverse voltage
BAS19 − 100 V
BAS20 − 150 V
BAS21 − 200 V
I
F
continuous forward current see Fig.2; note 1 − 200 mA
I
FRM
repetitive peak forward current − 625 mA
I
FSM
non-repetitive peak forward current square wave; T
j
= 25 °C prior to
surge; see
Fig.4
t = 1 µs − 9 A
t = 100 µs − 3 A
t = 10 ms − 1.7 A
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C