Datasheet

BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 8 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
8. Test information
9. Package outline
(1) I
R
=1mA
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time t
r
= 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
Input signal: forward pulse rise time t
r
= 20 ns; forward current pulse duration t
p
≥ 100 ns; duty cycle δ≤0.005
Fig 6. Forward recovery voltage test circuit and waveforms
t
rr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+ I
F
× R
S
R
S
= 50 Ω
I
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
t
r
t
t
p
10 %
90 %
I
input signal
R
S
= 50 Ω
I
R
i
= 50 Ω
OSCILLOSCOPE
1 kΩ 450 Ω
D.U.T.
mga882
V
FR
t
output signal
V
Fig 7. Package outline BAS16 (SOT23/TO-236AB) Fig 8. Package outline BAS16H (SOD123F)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
04-11-29Dimensions in mm
1.2
1.0
0.25
0.10
3.6
3.4
2.7
2.5
0.55
0.35
0.70
0.55
1.7
1.5
1
2