Datasheet

BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 6 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 µm copper strip line.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[5] Single diode loaded.
[6] Soldering point of cathode tab.
[7] Soldering points at pins 4, 5 and 6.
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
[2] When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100 Ω; measured at I
R
= 1 mA.
[3] When switched from I
F
= 10 mA; t
r
=20ns.
R
th(j-sp)
thermal resistance from
junction to solder point
BAS16H
[6]
--70K/W
BAS16J
[6]
--55K/W
BAS16T - - 350 K/W
BAS16VY
[5][7]
- - 260 K/W
BAS316
[6]
- - 150 K/W
BAS516
[6]
- - 120 K/W
Table 7. Thermal characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage
[1]
I
F
= 1 mA - - 715 mV
I
F
= 10 mA - - 855 mV
I
F
=50mA --1V
I
F
= 150 mA - - 1.25 V
I
R
reverse current V
R
=25V --30nA
V
R
= 80 V - - 0.5 µA
V
R
= 25 V; T
j
= 150 °C --30µA
V
R
= 80 V; T
j
= 150 °C --50µA
C
d
diode capacitance f = 1 MHz; V
R
=0V
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
- - 1.5 pF
BAS516 - - 1 pF
t
rr
reverse recovery time
[2]
--4ns
V
FR
forward recovery voltage
[3]
- - 1.75 V