Datasheet

BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 4 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
RRM
repetitive peak reverse
voltage
- 100 V
V
R
reverse voltage - 100 V
I
F
forward current
BAS16
[1]
- 215 mA
BAS16H
BAS16L
[2]
- 215 mA
BAS16T
[1]
- 155 mA
BAS16VV
BAS16VY
[1][3]
- 200 mA
BAS16W
[1]
- 175 mA
BAS16J
BAS316
BAS516
[1]
- 250 mA
I
FRM
repetitive peak forward
current
t
p
≤ 0.5 µs;
δ≤0.25
- 500 mA
I
FSM
non-repetitive peak forward
current
square wave
[4]
t
p
=1µs-4A
t
p
=1ms - 1 A
t
p
= 1 s - 0.5 A
P
tot
total power dissipation
BAS16 T
amb
≤ 25 °C
[1]
- 250 mW
BAS16H T
amb
≤ 25 °C
[2][5]
[6]
- 380 mW
[5][6]
[7]
- 830 mW
BAS16J T
amb
≤ 25 °C
[5][6]
[7]
- 550 mW
BAS16L T
amb
≤ 25 °C
[2][5]
[6]
- 250 mW
BAS16T T
sp
≤ 90 °C
[1]
- 170 mW
BAS16VV T
amb
≤ 25 °C
[1][3]
[5][8]
- 180 mW
BAS16VY T
sp
≤ 85 °C
[1][3]
[8]
- 250 mW
BAS16W T
amb
≤ 25 °C
[1]
- 200 mW
BAS316 T
sp
≤ 90 °C
[1][6]
- 400 mW
BAS516 T
sp
≤ 90 °C
[1][5]
[6]
- 500 mW