Datasheet

ManualsBrandsNXP ManualsDiodesSmall Signal Diode 250mA 100V SOT-23

1. Product proﬁle

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)

plastic packages.

1.2 Features

1.3 Applications

n High-speed switching

n General-purpose switching

BAS16 series

High-speed switching diodes

Rev. 05 — 25 August 2008 Product data sheet

Table 1. Product overview

Type number Package Conﬁguration Package

conﬁguration

NXP JEITA JEDEC

BAS16 SOT23 - TO-236AB single small

BAS16H SOD123F - - single small and ﬂat lead

BAS16J SOD323F SC-90 - single very small and ﬂat

lead

BAS16L SOD882 - - single leadless ultra

small

BAS16T SOT416 SC-75 - single ultra small

BAS16VV SOT666 - - triple isolated ultra small and ﬂat

lead

BAS16VY SOT363 SC-88 - triple isolated very small

BAS16W SOT323 SC-70 - single very small

BAS316 SOD323 SC-76 - single very small

BAS516 SOD523 SC-79 - single ultra small and ﬂat

lead

n High switching speed: t

≤ 4ns n Low capacitance

n Low leakage current n Reverse voltage: V

≤ 100 V

n Repetitive peak reverse voltage:

RRM

≤ 100 V

n Small SMD plastic packages

Summary of content (20 pages)

PAGE 1
BAS16 series High-speed switching diodes Rev. 05 — 25 August 2008 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1.
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BAS16 series NXP Semiconductors High-speed switching diodes 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 100 V Per diode VR reverse voltage IR reverse current trr reverse recovery time [1] VR = 80 V [1] - - 0.5 µA - - 4 ns When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. 2. Pinning information Table 3.
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BAS16 series NXP Semiconductors High-speed switching diodes 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BAS16 - plastic surface-mounted package; 3 leads SOT23 BAS16H - plastic surface-mounted package; 2 leads SOD123F BAS16J SC-90 plastic surface-mounted package; 2 leads SOD323F BAS16L - leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.
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BAS16 series NXP Semiconductors High-speed switching diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BAS16 series NXP Semiconductors High-speed switching diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
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BAS16 series NXP Semiconductors High-speed switching diodes Table 7. Thermal characteristics …continued Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions BAS16H [6] BAS16J [6] Min Typ Max Unit - - 70 K/W - - 55 K/W - - 350 K/W [5][7] - - 260 K/W BAS316 [6] - - 150 K/W BAS516 [6] - - 120 K/W BAS16T BAS16VY [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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BAS16 series NXP Semiconductors High-speed switching diodes 006aab132 103 IF (mA) mbg704 102 IFSM (A) 102 10 10 1 (1) (2) (3) (4) 1 10−1 10−1 0 0.2 0.4 0.6 0.8 1.0 1 1.2 1.4 VF (V) 10 102 103 104 tp (µs) (1) Tamb = 150 °C Based on square wave currents. (2) Tamb = 85 °C Tj = 25 °C; prior to surge (3) Tamb = 25 °C (4) Tamb = −40 °C Fig 1. Forward current as a function of forward voltage; typical values Fig 2.
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BAS16 series NXP Semiconductors High-speed switching diodes 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE V = VR + IF × RS trr t Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5.
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BAS16 series NXP Semiconductors High-speed switching diodes 1.35 1.15 0.80 0.65 1 2 0.30 0.22 2.7 2.3 0.50 0.46 0.62 0.55 0.5 0.3 1.8 1.6 1.02 0.95 0.65 0.30 0.22 1 2 Dimensions in mm Fig 9. 0.55 0.47 0.25 0.10 0.40 0.25 04-09-13 Package outline BAS16J (SOD323F/SC-90) Dimensions in mm 03-04-17 Fig 10. Package outline BAS16L (SOD882) 1.7 1.5 0.95 0.60 1.8 1.4 3 cathode marking on top side 6 0.45 0.15 0.6 0.5 5 4 0.3 0.1 1.75 0.9 1.45 0.7 1.7 1.5 1.3 1.
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BAS16 series NXP Semiconductors High-speed switching diodes 1.35 1.15 0.65 0.58 0.45 0.15 1 2.7 2.3 0.85 0.75 1.1 0.8 1 1.65 1.25 1.55 1.15 1.8 1.6 2 2 0.40 0.25 0.25 0.10 Dimensions in mm 0.34 0.26 03-12-17 Fig 15. Package outline BAS316 (SOD323/SC-76) 0.17 0.11 Dimensions in mm 02-12-13 Fig 16. Package outline BAS516 (SOD523/SC-79) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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BAS16 series NXP Semiconductors High-speed switching diodes 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 18.
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BAS16 series NXP Semiconductors High-speed switching diodes 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2×) Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 19. Reflow soldering footprint BAS16H (SOD123F) 3.05 2.2 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 0.5 (2×) 0.6 (2×) Dimensions in mm sod323f_fr Reflow soldering is the only recommended soldering method. Fig 20.
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BAS16 series NXP Semiconductors High-speed switching diodes 1.3 R0.05 (8×) 0.7 solder lands solder resist 0.6 0.7 (2×) (2×) 0.9 solder paste occupied area 0.3 (2×) Dimensions in mm 0.4 (2×) sod882_fr Reflow soldering is the only recommended soldering method. Fig 21. Reflow soldering footprint BAS16L (SOD882) 2.2 1.7 solder lands solder resist 1 0.85 2 solder paste 0.5 (3×) occupied area Dimensions in mm 0.6 (3×) 1.3 sot416_fr Fig 22.
PAGE 14
BAS16 series NXP Semiconductors High-speed switching diodes 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) placement area 0.55 (2×) solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Reflow soldering is the only recommended soldering method. Fig 23. Reflow soldering footprint BAS16VV (SOT666) 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.
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BAS16 series NXP Semiconductors High-speed switching diodes 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88) 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 1.3 1 0.5 (3×) solder paste occupied area Dimensions in mm 0.55 (3×) sot323_fr Fig 26.
PAGE 16
BAS16 series NXP Semiconductors High-speed switching diodes 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70) 3.05 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 2.2 0.5 (2×) 0.6 (2×) Dimensions in mm sod323_fr Fig 28.
PAGE 17
BAS16 series NXP Semiconductors High-speed switching diodes 5 2.9 1.5 (2×) solder lands solder resist occupied area 1.2 2.75 (2×) Dimensions in mm preferred transport direction during soldering sod323_fw Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76) 2.15 1.1 solder lands solder resist 0.5 0.6 (2×) (2×) 1.2 solder paste occupied area 0.7 (2×) 0.8 (2×) Dimensions in mm sod523_fr Reflow soldering is the only recommended soldering method. Fig 30.
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BAS16 series NXP Semiconductors High-speed switching diodes 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS16_SER_5 20080825 Product data sheet - BAS16_4 BAS16H_1 BAS16J_1 BAS16L_1 BAS16T_1 BAS16VV_BAS16VY_3 BAS16W_4 BAS316_4 BAS516_1 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
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BAS16 series NXP Semiconductors High-speed switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BAS16 series NXP Semiconductors High-speed switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . .