Datasheet

BAS16_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 6 — 24 September 2014 4 of 21
NXP Semiconductors
BAS16 series
High-speed switching diodes
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line.
[3] Single diode loaded.
[4] Soldering point of cathode tab.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[6] Soldering points at pins 4, 5 and 6.
I
F
forward current
BAS16
[1]
-215mA
BAS16H
BAS16L
[2]
-215mA
BAS16T
[1]
-155mA
BAS16VV
BAS16VY
[1][3]
-200mA
BAS16W
[1]
-175mA
BAS16J
BAS316
BAS516
[1]
-250mA
I
FRM
repetitive peak forward
current
t
p
 0.5 ms;
0.25
-500mA
I
FSM
non-repetitive peak forward
current
square wave;
T
j(init)
= 25 °C
t
p
=1s-4A
t
p
=1ms - 1 A
t
p
=1s - 0.5 A
P
tot
total power dissipation
BAS16 T
amb
 25 C
[1]
-250mW
BAS16H T
amb
 25 C
[2]
-380mW
[5]
-830mW
BAS16J T
amb
 25 C
[5]
-550mW
BAS16L T
amb
 25 C
[2]
-250mW
BAS16T T
sp
 90 C
[1][4]
-170mW
BAS16VV T
amb
 25 C
[1][3]
-180mW
BAS16VY T
sp
 85 C
[1][3][6]
-250mW
BAS16W T
amb
 25 C
[1]
-200mW
BAS316 T
sp
 90 C
[1][4]
-400mW
BAS516 T
sp
 90 C
[1][4]
-500mW
Per device
T
j
junction temperature - 150 C
T
amb
ambient temperature 65 +150 C
T
stg
storage temperature 65 +150 C
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit