Datasheet

1999 May 26 3
Philips Semiconductors Product specification
High-speed diode BAS16
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage see Fig.3
I
F
= 1 mA 715 mV
I
F
= 10 mA 855 mV
I
F
=50mA 1 V
I
F
= 150 mA 1.25 V
I
R
reverse current see Fig.5
V
R
=25V 30 nA
V
R
=75V 1 µA
V
R
=25V; T
j
= 150 °C30µA
V
R
=75V; T
j
= 150 °C50µA
C
d
diode capacitance f = 1 MHz; V
R
= 0; see Fig.6 1.5 pF
t
rr
reverse recovery time when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100 Ω; measured at
I
R
= 1 mA; see Fig.7
4ns
V
fr
forward recovery voltage when switched from I
F
= 10 mA; t
r
= 20 ns;
see Fig.8
1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 330 K/W
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W