Datasheet

1999 May 26 2
Philips Semiconductors Product specification
High-speed diode BAS16
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in hybrid
thick and thin-film circuits.
DESCRIPTION
The BAS16 is a high-speed switching
diode fabricated in planar technology,
and encapsulated in a small SOT23
plastic SMD package.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
Fig.1 Simplified outline (SOT23) and symbol.
Marking code: A6p = made in Hong Kong; A6t = made in Malaysia.
handbook, halfpage
21
3
MAM185
2
n.c.
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage − 85 V
V
R
continuous reverse voltage − 75 V
I
F
continuous forward current see Fig.2; note 1 − 215 mA
I
FRM
repetitive peak forward current − 500 mA
I
FSM
non-repetitive peak forward current square wave; T
j
=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
total power dissipation T
amb
=25°C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C