DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS16 High-speed diode Product specification Supersedes data of 1996 Sep 10 1999 May 26
Philips Semiconductors Product specification High-speed diode BAS16 FEATURES DESCRIPTION • Small plastic SMD package The BAS16 is a high-speed switching diode fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V PINNING PIN • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA.
Philips Semiconductors Product specification High-speed diode BAS16 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MAX. UNIT see Fig.3 IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA 1.25 V 30 nA see Fig.5 VR = 25 V VR = 75 V 1 µA VR = 25 V; Tj = 150 °C 30 µA VR = 75 V; Tj = 150 °C 50 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 1.
Philips Semiconductors Product specification High-speed diode BAS16 GRAPHICAL DATA MSA562 -1 MBG382 300 250 handbook, halfpage IF (mA) IF (mA) 200 (1) (2) (3) 200 150 100 100 50 0 0 0 50 100 150 200 Tamb (oC) 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 Fig.3 Maximum permissible continuous forward current as a function of ambient temperature.
Philips Semiconductors Product specification High-speed diode BAS16 MGA884 105 Cd (pF) IR (nA) 10 V R = 75 V 4 max 103 10 MBG446 0.8 handbook, halfpage 0.6 75 V 0.4 25 V 2 0.2 typ typ 10 0 0 100 T j ( o C) 0 200 4 8 12 VR (V) 16 f = 1 MHz; Tj = 25 °C. Fig.5 1999 May 26 Reverse current as a function of junction temperature. Fig.6 5 Diode capacitance as a function of reverse voltage; typical values.
Philips Semiconductors Product specification High-speed diode BAS16 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms.
Philips Semiconductors Product specification High-speed diode BAS16 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
Philips Semiconductors Product specification High-speed diode BAS16 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134).
Philips Semiconductors Product specification High-speed diode BAS16 NOTES 1999 May 26 9
Philips Semiconductors Product specification High-speed diode BAS16 NOTES 1999 May 26 10
Philips Semiconductors Product specification High-speed diode BAS16 NOTES 1999 May 26 11
Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd.
