Datasheet

September 1993 2
Philips Semiconductors Product specification
Quad 2-input NAND Schmitt trigger 74HC/HCT132
FEATURES
• Output capability: standard
• I
CC
category: SSI
GENERAL DESCRIPTION
The 74HC/HCT132 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL).
They are specified in compliance with JEDEC standard no. 7A.
The 74HC/HCT132 contain four 2-input NAND gates which accept standard input signals. They are capable of
transforming slowly changing input signals into sharply defined, jitter-free output signals.
The gate switches at different points for positive and negative-going signals. The difference between the positive voltage
V
T+
and the negative voltage V
T−
is defined as the hysteresis voltage V
H
.
QUICK REFERENCE DATA
GND = 0 V; T
amb
=25°C; t
r
=t
f
= 6 ns
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in µW):
P
D
=C
PD
× V
CC
2
× f
i
+∑(C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz
f
o
= output frequency in MHz
∑ (C
L
× V
CC
2
× f
o
) = sum of outputs
C
L
= output load capacitance in pF
V
CC
= supply voltage in V
2. For HC the condition is V
I
= GND to V
CC
For HCT the condition is V
I
= GND to V
CC
− 1.5 V
ORDERING INFORMATION
See
“74HC/HCT/HCU/HCMOS Logic Package Information” .
SYMBOL PARAMETER CONDITIONS
TYPICAL
UNIT
HC HCT
t
PHL
/ t
PLH
propagation delay nA, nB to nY C
L
= 15 pF; V
CC
=5 V 11 17 ns
C
I
input capacitance 3.5 3.5 pF
C
PD
power dissipation capacitance per gate notes 1 and 2 24 20 pF