Datasheet

2003 Jun 17 14
Philips Semiconductors Product specification
Quad bilateral switches 74HC4066; 74HCT4066
Type 74HCT4066
GND = 0 V; t
r
=t
f
= 6 ns; C
L
= 50 pF; V
is
is the input voltage at pins nY or nZ, whichever is assigned as an input; V
os
is
the output voltage at pins nY or nZ, whichever is assigned as an output.
Note
1. All typical values are measured at T
amb
=25°C.
74HC4066 and 74HCT4066
At recommended conditions and typical values; GND = 0 V; t
r
=t
f
= 6 ns; V
is
is the input voltage at pins nY or nZ,
whichever is assigned as an input; V
os
is the output voltage at pins nY or nZ, whichever is assigned as an output.
Notes
1. Adjust input voltage V
is
is 0 dBM level (0 dBM = 1 mW into 600 Ω).
2. Adjust input voltage V
is
is 0 dBM level at V
os
for 1 MHz (0 dBM = 1 mW into 50 Ω).
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
OTHER V
CC
(V)
T
amb
= −40 to +85 °C; note 1
t
PHL
/t
PLH
propagation delay
V
is
to V
os
R
L
= ∞; see Fig.19 4.5 − 315ns
t
PZH
/t
PZL
turn-on time nE to V
os
R
L
=1kΩ; see Figs 20 and 21 4.5 − 12 30 ns
t
PHZ
/t
PLZ
turn-off time nE to V
os
R
L
=1kΩ; see Figs 20 and 21 4.5 − 20 44 ns
T
amb
= −40 to +125 °C
t
PHL
/t
PLH
propagation delay
V
is
to V
os
R
L
= ∞; see Fig.19 4.5 −−18 ns
t
PZH
/t
PZL
turn-on time nE to V
os
R
L
=1kΩ; see Figs 20 and 21 4.5 −−36 ns
t
PHZ
/t
PLZ
turn-off time nE to V
os
R
L
=1kΩ; see Figs 20 and 21 4.5 −−53 ns
SYMBOL PARAMETER
CONDITIONS
TYP. UNIT
OTHER V
is(p-p)
(V) V
CC
(V)
d
sin
sine wave distortion f = 1 kHz; R
L
=10kΩ; C
L
=50pF;
see Fig.17
4.0 4.5 0.04 %
8.0 9.0 0.02 %
f = 10 kHz; R
L
=10kΩ;C
L
=50pF;
see Fig.17
4.0 4.5 0.12 %
8.0 9.0 0.06 %
α
OFF(feedthr)
switch OFF signal
feed-through
R
L
= 600 Ω; C
L
= 50 pF; f = 1 MHz;
see Figs 11 and 18
note 1 4.5 −50 dB
9.0 −50 dB
α
ct(s)
crosstalk between any two
switches
R
L
= 600 Ω; C
L
= 50 pF; f = 1 MHz;
see Fig.13
note 1 4.5 −60 dB
9.0 −60 dB
V
ct(p-p)
crosstalk voltage between
any input to any switch
(peak-to-peak value)
R
L
= 600 Ω; C
L
= 50 pF; f = 1 MHz;
see Fig.15 (nE, square wave
between V
CC
and GND,
t
r
=t
f
= 6 ns)
− 4.5 110 mV
9.0 220 mV
f
max
minimum frequency
response (−3 dB)
R
L
=50Ω;C
L
= 10 pF; see Figs 12
and 16
note 2 4.5 180 MHz
9.0 200 MHz
C
S
maximum switch
capacitance
−−8pF