Datasheet

74HC_HCT1G00 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 5 — 25 September 2013 5 of 12
NXP Semiconductors 74HC1G00; 74HCT1G00
2-input NAND gate
11. Dynamic characteristics
[1] t
pd
is the same as t
PLH
and t
PHL
.
[2] C
PD
is used to determine the dynamic power dissipation P
D
(W).
P
D
=C
PD
 V
CC
2
 f
i
+  (C
L
 V
CC
2
 f
o
)where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
 (C
L
 V
CC
2
 f
o
) = sum of outputs
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
=5.5V
--10- 20 A
I
CC
additional supply
current
per input; V
CC
= 4.5 V to 5.5 V;
V
I
=V
CC
 2.1 V; I
O
=0A
- - 500 - 850 A
C
I
input capacitance - 1.5 - - - pF
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
=25  C.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
Table 8. Dynamic characteristics
GND = 0 V; t
r
= t
f
 6.0 ns; All typical values are measured at T
amb
=25  C. For test circuit, see Figure 6
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
For type 74HC1G00
t
pd
propagation delay A and B to Y; see Figure 5
[1]
V
CC
= 2.0 V; C
L
= 50 pF - 25 115 - 135 ns
V
CC
= 4.5 V; C
L
=50pF - 9 23 - 27 ns
V
CC
= 5.0 V; C
L
=15pF - 7 - - - ns
V
CC
= 6.0 V; C
L
=50pF - 8 20 - 23 ns
C
PD
power dissipation
capacitance
V
I
=GNDtoV
CC
[2]
-19- - -pF
For type 74HCT1G00
t
pd
propagation delay A and B to Y; see Figure 5
[1]
V
CC
= 4.5 V; C
L
=50pF - 12 24 - 27 ns
V
CC
= 5.0 V; C
L
=15pF - 10 - - - ns
C
PD
power dissipation
capacitance
V
I
=GNDtoV
CC
 1.5 V
[2]
-21- - -pF