Datasheet

2003 Jun 30 8
Philips Semiconductors Product specification
Quad 2-input NAND gate 74HC00; 74HCT00
Type 74HCT00
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Note
1. All typical values are measured at T
amb
=25°C.
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
OTHER V
CC
(V)
T
amb
= −40 to +85 °C; note 1
V
IH
HIGH-level input voltage 4.5 to 5.5 2.0 1.6 − V
V
IL
LOW-level input voltage 4.5 to 5.5 − 1.2 0.8 V
V
OH
HIGH-level output voltage V
I
=V
IH
or V
IL
I
O
= −20 µA 4.5 4.4 4.5 − V
I
O
= −4.0 mA 4.5 3.84 4.32 − V
V
OL
LOW-level output voltage V
I
=V
IH
or V
IL
I
O
=20µA 4.5 − 0 0.1 V
I
O
= 4.0 mA 4.5 − 0.15 0.33 V
I
LI
input leakage current V
I
=V
CC
or GND 5.5 −−±1.0 µA
I
OZ
3-state output OFF current V
I
=V
IH
or V
IL
;
V
O
=V
CC
or GND;
I
O
=0
5.5 −−±5.0 µA
I
CC
quiescent supply current V
I
=V
CC
or GND;
I
O
=0
5.5 −−20 µA
∆I
CC
additional supply current per input V
I
=V
CC
− 2.1 V;
I
O
=0
4.5 to 5.5 − 150 675 µA
T
amb
= −40 to +125 °C
V
IH
HIGH-level input voltage 4.5 to 5.5 2.0 −−V
V
IL
LOW-level input voltage 4.5 to 5.5 −−0.8 V
V
OH
HIGH-level output voltage V
I
=V
IH
or V
IL
I
O
= −20 µA 4.5 4.4 −−V
I
O
=−4.0 mA 4.5 3.7 −−V
V
OL
LOW-level output voltage V
I
=V
IH
or V
IL
I
O
=20µA 4.5 −−0.1 V
I
O
= 4.0 mA 4.5 −−0.4 V
I
LI
input leakage current V
I
=V
CC
or GND 5.5 −−±1.0 µA
I
OZ
3-state output OFF current V
I
=V
IH
or V
IL
;
V
O
=V
CC
or GND;
I
O
=0
5.5 −−±10 µA
I
CC
quiescent supply current V
I
=V
CC
or GND;
I
O
=0
5.5 −−40 µA
∆I
CC
additional supply current per input V
I
=V
CC
− 2.1 V;
I
O
=0
4.5 to 5.5 −−735 µA