Datasheet

2003 Jun 30 7
Philips Semiconductors Product specification
Quad 2-input NAND gate 74HC00; 74HCT00
Note
1. All typical values are measured at T
amb
=25°C.
T
amb
= −40 to +125 °C
V
IH
HIGH-level input voltage 2.0 1.5 −−V
4.5 3.15 −−V
6.0 4.2 −−V
V
IL
LOW-level input voltage 2.0 −−0.5 V
4.5 −−1.35 V
6.0 −−1.8 V
V
OH
HIGH-level output voltage V
I
=V
IH
or V
IL
I
O
= −20 µA 2.0 1.9 −−V
I
O
=−20 µA 4.5 4.4 −−V
I
O
=−20 µA 6.0 5.9 −−V
I
O
=−4.0 mA 4.5 3.7 −−V
I
O
=−5.2 mA 6.0 5.2 −−V
V
OL
LOW-level output voltage V
I
=V
IH
or V
IL
I
O
=20µA 2.0 −−0.1 V
I
O
=20µA 4.5 −−0.1 V
I
O
=20µA 6.0 −−0.1 V
I
O
= 4.0 mA 4.5 −−0.4 V
I
O
= 5.2 mA 6.0 −−0.4 V
I
LI
input leakage current V
I
=V
CC
or GND 6.0 −−±1.0 µA
I
OZ
3-state output OFF current V
I
=V
IH
or V
IL
;
V
O
=V
CC
or GND
6.0 −−±10.0 µA
I
CC
quiescent supply current V
I
=V
CC
or GND; I
O
= 0 6.0 −−40 µA
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
OTHER V
CC
(V)