Datasheet
Table Of Contents

2003 Jun 30 6
Philips Semiconductors Product specification
Quad 2-input NAND gate 74HC00; 74HCT00
DC CHARACTERISTICS
Type 74HC00
At recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
OTHER V
CC
(V)
T
amb
= −40 to +85 °C; note 1
V
IH
HIGH-level input voltage 2.0 1.5 1.2 − V
4.5 3.15 2.4 − V
6.0 4.2 3.2 − V
V
IL
LOW-level input voltage 2.0 − 0.8 0.5 V
4.5 − 2.1 1.35 V
6.0 − 2.8 1.8 V
V
OH
HIGH-level output voltage V
I
=V
IH
or V
IL
I
O
= −20 µA 2.0 1.9 2.0 − V
I
O
= −20 µA 4.5 4.4 4.5 − V
I
O
= −20 µA 6.0 5.9 6.0 − V
I
O
= −4.0 mA 4.5 3.84 4.32 − V
I
O
= −5.2 mA 6.0 5.34 5.81 − V
V
OL
LOW-level output voltage V
I
=V
IH
or V
IL
I
O
=20µA 2.0 − 0 0.1 V
I
O
=20µA 4.5 − 0 0.1 V
I
O
=20µA 6.0 − 0 0.1 V
I
O
= 4.0 mA 4.5 − 0.15 0.33 V
I
O
= 5.2 mA 6.0 − 0.16 0.33 V
I
LI
input leakage current V
I
=V
CC
or GND 6.0 −−±1.0 µA
I
OZ
3-state output OFF current V
I
=V
IH
or V
IL
;
V
O
=V
CC
or GND
6.0 −−±.5.0 µA
I
CC
quiescent supply current V
I
=V
CC
or GND; I
O
= 0 6.0 −−20 µA