Datasheet

2003 Jun 30 5
Philips Semiconductors Product specification
Quad 2-input NAND gate 74HC00; 74HCT00
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Note
1. For DIP14 packages: above 70 °C derate linearly with 12 mW/K.
For SO14 packages: above 70 °C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.
SYMBOL PARAMETER CONDITIONS
74HC00 74HCT00
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
V
CC
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
V
I
input voltage 0 − V
CC
0 − V
CC
V
V
O
output voltage 0 − V
CC
0 − V
CC
V
T
amb
operating ambient
temperature
see DC and AC
characteristics per
device
−40 +25 +125 −40 +25 +125 °C
t
r
,t
f
input rise and fall times V
CC
= 2.0 V −−1000 −−−ns
V
CC
= 4.5 V − 6.0 500 − 6.0 500 ns
V
CC
= 6.0 V −−400 −−−ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
supply voltage −0.5 +7.0 V
I
IK
input diode current V
I
< −0.5 V or V
I
>V
CC
+ 0.5 V −±20 mA
I
OK
output diode current V
O
< −0.5 V or V
O
>V
CC
+ 0.5 V −±20 mA
I
O
output source or sink
current
−0.5V<V
O
<V
CC
+ 0.5 V −±25 mA
I
CC
, I
GND
V
CC
or GND current −±50 mA
T
stg
storage temperature −65 +150 °C
P
tot
power dissipation T
amb
= −40 to +125 °C; note 1 − 500 mW