Datasheet

74AHC_AHCT1G08_6 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 06 — 29 June 2007 5 of 11
NXP Semiconductors
74AHC1G08; 74AHCT1G08
2-input AND gate
11. Dynamic characteristics
[1] t
pd
is the same as t
PLH
and t
PHL
.
[2] Typical values are measured at V
CC
= 3.3 V.
[3] Typical values are measured at V
CC
= 5.0 V.
[4] C
PD
is used to determine the dynamic power dissipation P
D
(µW).
P
D
=C
PD
× V
CC
2
× f
i
+ ∑ (C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts
I
CC
supply current V
I
=V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
- - 1.0 - 10 - 40 µA
∆I
CC
additional
supply current
per input pin; V
I
= 3.4 V;
other inputs at V
CC
or GND;
I
O
= 0 A; V
CC
= 5.5 V
- - 1.35 - 1.5 - 1.5 mA
C
I
input
capacitance
- 1.5 10 - 10 - 10 pF
Table 7. Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
Table 8. Dynamic characteristics
GND = 0 V; t
r
= t
f
= ≤ 3.0 ns. For test circuit see Figure 6.
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
For type 74AHC1G08
t
pd
propagation
delay
A and B to Y;
see
Figure 5
[1]
V
CC
= 3.0 V to 3.6 V
[2]
C
L
= 15 pF - 4.6 8.8 1.0 10.5 1.0 12.0 ns
C
L
= 50 pF - 6.5 12.3 1.0 14.0 1.0 16.0 ns
V
CC
= 4.5 V to 5.5 V
[3]
C
L
= 15 pF - 3.2 5.9 1.0 7.0 1.0 8.0 ns
C
L
= 50 pF - 4.6 7.9 1.0 9.0 1.0 10.5 ns
C
PD
power
dissipation
capacitance
per buffer;
C
L
= 50 pF; f = 1 MHz;
V
I
= GND to V
CC
[4]
-17- - - - - pF
For type 74AHCT1G08
t
pd
propagation
delay
A and B to Y;
see
Figure 5
[1]
V
CC
= 4.5 V to 5.5 V
[3]
C
L
= 15 pF - 3.6 6.2 1.0 7.1 1.0 8.0 ns
C
L
= 50 pF - 5.1 7.9 1.0 9.0 1.0 10.5 ns
C
PD
power
dissipation
capacitance
per buffer;
C
L
= 50 pF; f = 1 MHz;
V
I
= GND to V
CC
[4]
-19- - - - - pF