Datasheet

74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 10 July 2007 4 of 12
NXP Semiconductors
74AHC1GU04
Inverter
11. Dynamic characteristics
[1] t
pd
is the same as t
PLH
and t
PHL
.
[2] Typical values are measured at V
CC
= 3.3 V.
[3] Typical values are measured at V
CC
= 5.0 V.
[4] C
PD
is used to determine the dynamic power dissipation P
D
(µW).
P
D
=C
PD
× V
CC
2
× f
i
+ ∑ (C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
= −50 µA; V
CC
= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
I
O
= −50 µA; V
CC
= 3.0 V 2.9 3.0 - 2.9 - 2.9 - V
I
O
= −50 µA; V
CC
= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= −4.0 mA; V
CC
= 3.0 V 2.58 - - 2.48 - 2.40 - V
I
O
= −8.0 mA; V
CC
= 4.5 V 3.94 - - 3.8 - 3.70 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 50 µA; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 50 µA; V
CC
= 3.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 50 µA; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 3.0 V - - 0.36 - 0.44 - 0.55 V
I
O
= 8.0 mA; V
CC
= 4.5 V - - 0.36 - 0.44 - 0.55 V
I
I
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
- - 0.1 - 1.0 - 2.0 µA
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A;
V
CC
= 5.5 V
- - 1.0 - 10 - 40 µA
C
I
input
capacitance
- 1.5 10 - 10 - 10 pF
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
Table 8. Dynamic characteristics
GND = 0 V; t
r
= t
f
= ≤ 3.0 ns. For test circuit see Figure 6.
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
t
pd
propagation
delay
A to Y; see Figure 5
[1]
V
CC
= 3.0 V to 3.6 V
[2]
C
L
= 15 pF - 3.4 7.1 1.0 8.5 1.0 10.0 ns
C
L
= 50 pF - 4.9 10.6 1.0 12.0 1.0 13.5 ns
V
CC
= 4.5 V to 5.5 V
[3]
C
L
= 15 pF - 2.6 5.5 1.0 6.0 1.0 7.0 ns
C
L
= 50 pF - 3.6 7.0 1.0 8.0 1.0 9.0 ns
C
PD
power
dissipation
capacitance
per buffer;
V
I
= GND to V
CC
[4]
-14- - - - - pF