Datasheet

Table Of Contents
Advance Information MC68HC908GP20Rev 2.1
398 Freescale Semiconductor
23.18 Memory Characteristics
Characteristic Symbol Min Typ Max Unit
RAM data retention voltage V
RDR
1.3 V
FLASH pages per row 8 8 Pages
FLASH bytes per page 8 8 Bytes
FLASH read bus clock frequency f
Read
(1)
1. f
Read
is defined as the frequency range for which the FLASH memory can be read.
32 k 8.4 M Hz
FLASH charge pump clock frequency
(See 11.5.1 FLASH Charge Pump Frequency
Control.)
f
Pump
(2)
2. f
Pump
is defined as the charge pump clock frequency required for program, erase, and margin read operations.
1.8 2.5 MHz
FLASH block/bulk erase time t
Erase
100 ms
FLASH high-voltage kill time t
Kill
200 µs
FLASH return to read time t
HVD
50 µs
FLASH page program pulses fls
Pulses
(3)
3. fls
Pulses
is defined as the number of pulses used to program the FLASH using the required smart program algorithm.
1 20 TBD Pulses
FLASH page program step size t
PROG
(4)
4. t
PROG
is defined as the amount of time during one page program cycle that HVEN is held high.
1.0 1.2 ms
FLASH cumulative program time per row between
erase cycles
t
Row
(5)
5. t
Row
is defined as the cumulative time a row can see the program voltage before the row must be erased before further
programming.
——TBDms
FLASH HVEN low to MARGIN high time t
HVTV
50 µs
FLASH MARGIN high to PGM low time t
VTP
150 µs
FLASH row erase endurance
(6)
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase / program cycles.
100 Cycles
FLASH row program endurance
(7)
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase / program cycles.
100 Cycles
FLASH data retention time
(8)
8. The FLASH is guaranteed to retain data over the entire temperature range for at least the minimum time specified.
10 Years
Notes: