Datasheet

2N7002BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 17 June 2010 2 of 16
NXP Semiconductors
2N7002BK
60 V, 350 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2S source
3 D drain
12
3
017aaa00
0
G
D
S
Table 3. Ordering information
Type number Package
Name Description Version
2N7002BK TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
2N7002BK LN*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
amb
=25°C-60V
V
GS
gate-source voltage T
amb
=25°C-±20 V
I
D
drain current V
GS
=10V
[1]
T
amb
=25°C-350mA
T
amb
=100°C-245mA
I
DM
peak drain current T
amb
=25°C;
single pulse; t
p
≤ 10 μs
-1.2A