Datasheet

2N7002 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 8 September 2011 7 of 13
NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Source current as a function of source-drain
voltage; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aab101
0
1
2
3
-60 0 60 120 180
T
j
(°C)
V
GS(th)
(V)
min
typ
max
003aab100
10
-6
10
-5
10
-4
10
-3
0123
V
GS
(V)
I
D
(A)
min typ max
003aab356
0
0.2
0.4
0.6
0.8
1
0.2 0.4 0.6 0.8 1
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
150
°
C
003aab357
1
10
10
2
10
-1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
rss
C
oss