Datasheet

2N7002 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 8 September 2011 6 of 13
NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aab352
0
0.2
0.4
0.6
0.8
1
01234
V
DS
(V)
I
D
(A)
10
5
4.5
4
3.5V
GS
(V) =
003aab353
0
2000
4000
6000
8000
10000
0 0.2 0.4 0.6 0.8 1
I
D
(A)
R
DSon
(m
Ω
)
4
5
4.5
10
V
GS
(V) =
003aab354
0
0.2
0.4
0.6
0.8
1
0246
V
GS
(V)
I
D
(A)
T
j
= 150
°
C
25
°
C
T
j
(°C)
−60 180120060
03aa28
1.2
0.6
1.8
2.4
a
0