Datasheet

2N7002 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 8 September 2011 5 of 13
NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=10µA; V
GS
=0V; T
j
=25°C 60--V
I
D
=10µA; V
GS
=0V; T
j
= -55 °C 55 - - V
V
GSth
gate-source threshold
voltage
I
D
=0.25mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 9; see Figure 10
122.5V
I
D
=0.25mA; V
DS
=V
GS
; T
j
=150°C;
see Figure 9
; see Figure 10
0.6--V
I
D
=0.25mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 9; see Figure 10
--2.75V
I
DSS
drain leakage current V
DS
=48V; V
GS
=0V; T
j
= 25 °C - 0.01 1 µA
V
DS
=48V; V
GS
=0V; T
j
=150°C --10µA
I
GSS
gate leakage current V
GS
=15V; V
DS
=0V; T
j
= 25 °C - 10 100 nA
V
GS
=-15V; V
DS
=0V; T
j
= 25 °C - 10 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=500mA; T
j
=25°C;
see Figure 6; see Figure 8
-2.85Ω
V
GS
=10V; I
D
=500mA; T
j
= 150 °C;
see Figure 6
; see Figure 8
--9.25Ω
V
GS
=4.5V; I
D
=75mA; T
j
=25°C; see
Figure 6; see Figure 8
-3.85.3Ω
Dynamic characteristics
C
iss
input capacitance V
DS
=10V; f=1MHz; V
GS
=0V;
T
j
=25°C
- 3150pF
C
oss
output capacitance - 6.8 30 pF
C
rss
reverse transfer
capacitance
- 3.5 10 pF
t
on
turn-on time V
GS
=10V; V
DS
=50V; R
L
= 250 Ω;
R
G(ext)
=50Ω; R
GS
=50Ω
- 2.5 10 ns
t
off
turn-off time - 11 15 ns
Source-drain diode
V
SD
source-drain voltage I
S
=300mA; V
GS
=0V; T
j
=25°C; see
Figure 11
- 0.85 1.5 V
Q
r
recovered charge V
GS
=0V; I
S
= 300 mA;
dI
S
/dt = -100 A/µs
-30-nC
t
rr
reverse recovery time - 30 - ns