Datasheet

2N7002 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 8 September 2011 3 of 13
NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
Fig 1. Normalized continuous drain current as a
function of solder point temperature
Fig 2. Normalized total power dissipation as a
function of solder point temperature
Fig 3. Safe operating area; continous and peak drain currents as a function of drain-source voltage
T
sp
(°C)
0 20015050 100
03aa25
40
80
120
I
der
(%)
0
T
sp
(°C)
0 20015050 100
03aa17
40
80
120
P
der
(%)
0
003aab350
10
-2
10
-1
1
10
1 10 10
2
V
DS
(V)
I
D
(A)
DC
1 ms
100 µs
Limit R
DSon
= V
DS
/ I
D
10 ms
100 ms
10 µs
t
p
=