Datasheet

NXP Semiconductors
1PS76SB10
Schottky barrier single diode
1PS76SB10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 17 December 2012 4 / 8
006aac891
V
R
(V)
0 302010
4
6
2
8
10
C
d
(pF)
0
T
amb
= 25 °C; f = 1 MHz
Fig. 3. Diode capacitance as a function of reverse voltage; typical values
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
03-12-17Dimensions in mm
0.25
0.10
0.45
0.15
2.7
2.3
1.8
1.6
0.40
0.25
1.1
0.8
1.35
1.15
1
2
Fig. 4. Package outline SOD323