Datasheet

NXP Semiconductors
1PS76SB10
Schottky barrier single diode
1PS76SB10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 17 December 2012 2 / 8
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
1PS76SB10 SOD323 plastic surface-mounted package; 2 leads SOD323
7. Marking
Table 4. Marking codes
Type number Marking code
1PS76SB10 S0
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 30 V
I
F
forward current - 200 mA
I
FRM
repetitive peak forward current t
p
≤ 1 s; δ ≤ 0.5 - 300 mA
I
FSM
non-repetitive peak forward
current
t
p
< 10 ms; T
j(init)
= 25 °C - 600 mA
T
j
junction temperature - 125 °C
T
amb
ambient temperature -55 125 °C
T
stg
storage temperature -65 150 °C
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 450 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.