Datasheet

Analog Integrated Circuit Device Data
Freescale Semiconductor 17
10XSC425
CONTROL INTERFACE (CONTINUED)
R
DWN
Input Logic Pull-down Resistor (RSTB, WAKE and IN[0:3])
125 250 500 k
C
IN
Input Capacitance
– 4.0 12 pF
(26)
V
CL(WAKE)
Wake Input Clamp Voltage
•I
CL(WAKE)
< 2.5 mA
18 25 32
V
(25)
V
F(WAKE)
Wake Input Forward Voltage
•I
CL(WAKE)
= -2.5 mA
- 2.0 – - 0.3
V
V
SOH
SO High State Output Voltage
•I
OH
= 1.0 mA
V
DD
-0.4 – –
V
V
SOL
SO and FSB Low State Output Voltage
•I
OL
= -1.0 mA
– – 0.4
V
I
SO(LEAK)
SO, CSNS and FSB Tri-state Leakage Current
• CSB = V
IH
and 0.0 V < V
SO
< V
DD
, or FSB = 5.5 V, or CSNS = 0.0 V
- 2.0 0 2.0
A
RFS
FSI External Pull-down Resistance
Watchdog Disabled
Watchdog Enabled
–
10
0
Infinite
1.0
–
k
(27)
Notes
25. The current must be limited by a series resistance when using voltages > 7.0 V.
26. Input capacitance of SI, CSB, SCLK, RSTB, IN[0:3], and WAKE. This parameter is guaranteed by process monitoring but is not
production tested.
27. In Fail-safe, HS[0:3] depends respectively on ON[0:3]. FSI has an active internal pull-up to V
REG
 3.0 V.
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 6.0 V V
PWR
 20 V, 3.0 V  V
DD
 5.5 V, - 40 C  T
A
 125 C, GND = 0 V, unless
otherwise noted. Typical values noted reflect the approximate parameter means at T
A
= 25 °C under nominal conditions, unless
otherwise noted.
Symbol Characteristic Min Typ Max Unit Notes