Datasheet

TJA1085 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 23 October 2012 44 of 61
NXP Semiconductors
TJA1085
FlexRay active star coupler
Activity detection
t
det(act)(TXEN)
activity detection time on pin
TXEN
AS_Normal; from idle to active 20 - 70 ns
t
det(idle)(TXEN)
idle detection time on pin TXEN AS_Normal; from active to idle 20 - 70 ns
t
det(act-idle)
difference between active and
idle detection time
on pin TXEN AS_Normal 25 - +25 ns
on pin TRXD pins TRXD0 and TRXD1;
AS_Normal
50 - +50 ns
on bus AS_Normal 50 - +50 ns
t
det(act)(TRXD)
activity detection time on pin
TRXD
pins TRXD0 and TRXD1;
AS_Normal; from idle to active
100 - 200 ns
t
det(idle)(TRXD)
idle detection time on pin TRXD pins TRXD0 and TRXD1;
AS_Normal; from active to idle
100 - 200 ns
t
det(act)(bus)
activity detection time on bus pins AS_Normal; from idle to active 100 - 210 ns
t
det(idle)(bus)
idle detection time on bus pins AS_Normal; from active to idle 100 - 200 ns
t
det(int)
interrupt detection time from interrupt detection to falling
edge on INTN
--100s
t
INTNH(min)
minimum INTN HIGH time 10 - 40 s
Wake-up detection
t
det(wake)DATA_0
DATA_0 wake-up detection time 10 V  V
cm
 +15 V
[3]
1-4s
t
det(wake)idle
idle wake-up detection time 10 V  V
cm
 +15 V
[3]
1-4s
t
det(wake)tot
total wake-up detection time 10 V  V
cm
 +15 V
[3]
50 - 115 s
t
sup(int)wake
wake-up interruption suppression
time
10 V  V
cm
 +15 V
[3]
130 - 1000 ns
t
d(bus)(wake-act)
bus delay time from wake-up to
active
--18s
t
det(wake)(LWU)
wake-up detection time on pin
LWU
2.9 - 175 s
t
det(wake)(TRXD)
wake-up detection time on pin
TRXD
falling edge on TRXD_0 or
TRXD_1
100 - 400 ns
t
d(LWUwake-INHH)
delay time from LWU wake-up to
INH HIGH
falling edge on LWU to INH HIGH
AS_Sleep; 5.5 V < V
BAT
< 27 V
R
L(INH-GND)
= 100 k
[4]
2.9 - 100 s
falling edge on LWU to INH HIGH
AS_Sleep; 27 V < V
BAT
< 60 V
R
L(INH-GND)
= 100 k
[4]
--175s
t
d(buswake-INHH)
delay time from bus wake-up to
INH HIGH
AS_Sleep; V
BAT
> 5.5 V
R
L(INH-GND)
= 100 k
[4]
--55s
t
d(buswake-INTNL)
delay time from bus wake-up to
INTN LOW
AS_Sleep; AS_Standby
V
BAT
> 5.5 V
--10s
t
d(TRXDwake-INHH)
delay time from TRXD wake-up to
INH HIGH
falling edge on TRXDx to INH HIGH
AS_Sleep; R
L(INH-GND)
= 100 k
[4]
--55s
Table 15. Dynamic characteristics
…continued
All parameters are guaranteed for V
BAT
= 4.45 V to 60 V; V
CC
= 4.45 V to 5.25 V; V
BUF
= 4.45 V to 5.25 V; V
IO
= 2.55 V to
5.25 V; T
vj
=  40  C to + 150  C; R
bus
= 40  , C
bus
= 100 pF; C
RXD
= 15 pF; C
TRXD0
= C
TRXD1
= 50 pF and C
SDO
= 50 pF
unless otherwise specified. All voltages are defined with respect to ground; positive currents flow into the IC.
Symbol Parameter Conditions Min Typ Max Unit