Datasheet
TJA1021 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 25 March 2011 11 of 25
NXP Semiconductors
TJA1021
LIN 2.1/SAE J2602 transceiver
10. Static characteristics
Table 7. Static characteristics
V
BAT
= 5.5 V to 27 V; T
vj
=
40
C to +150
C; R
L(LIN-VBAT)
= 500
; all voltages are defined with respect to ground; positive
currents flow into the IC; typical values are given at V
BAT
= 12 V; unless otherwise specified.
[1]
Symbol Parameter Conditions Min Typ Max Unit
Supply
I
BAT
battery supply current Sleep mode
V
LIN
=V
BAT
;V
WAKE_N
=V
BAT
V
TXD
=0V; V
SLP_N
=0V
2710A
Standby mode; bus recessive
V
INH
=V
BAT
; V
LIN
=V
BAT
V
WAKE_N
=V
BAT
; V
TXD
=0V
V
SLP_N
=0V
150 450 1000 A
Standby mode; bus dominant
V
BAT
=12V; V
INH
=12V
V
LIN
=0V; V
WAKE_N
=12V
V
TXD
=0V V
SLP_N
=0V
300 800 1200 A
Normal mode; bus recessive
V
INH
=V
BAT
; V
LIN
=V
BAT
V
WAKE_N
=V
BAT
; V
TXD
=5V
V
SLP_N
=5V
300 800 1600 A
Normal mode; bus dominant
V
BAT
=12V; V
INH
=12V
V
WAKE_N
=12V; V
TXD
=0V
V
SLP_N
=5V
124mA
Power-on reset
V
th(POR)L
LOW-level power-on reset
threshold voltage
power-on reset 1.6 3.1 3.9 V
V
th(POR)H
HIGH-level power-on reset
threshold voltage
2.3 3.4 4.3 V
V
hys(POR)
power-on reset hysteresis
voltage
0.05 0.3 1 V
V
th(VBATL)L
LOW-level V
BAT
LOW
threshold voltage
3.9 4.4 4.7 V
V
th(VBATL)H
HIGH-level V
BAT
LOW
threshold voltage
4.2 4.7 4.9 V
V
hys(VBATL)
V
BAT
LOW hysteresis
voltage
0.05 0.3 1 V
Pin TXD
V
IH
HIGH-level input voltage 2 - 7 V
V
IL
LOW-level input voltage 0.3 - +0.8 V
V
hys
hysteresis voltage 50 200 400 mV
R
PD(TXD)
pull-down resistance on pin
TXD
V
TXD
= 5 V 140 500 1200 k
I
IL
LOW-level input current V
TXD
=0 V 5-+5A
I
OL
LOW-level output current local wake-up request
Standby mode; V
WAKE_N
=0V
V
LIN
=V
BAT
; V
TXD
=0.4V
1.5 - - mA