Audio Amplifier Product Data Sheet

ManualsBrandsNXP Semiconductors ManualsAmplifierTDA8932B

1. General description

The TDA8932B is a high efﬁciency class-D ampliﬁer with low power dissipation.

The continuous time output power is 2 × 15 W in stereo half-bridge application (R

=4Ω)

or 1 × 30 W in mono full-bridge application (R

=8Ω). Due to the low power dissipation

the device can be used without any external heat sink when playing music. Due to the

implementation of thermal foldback, even for high supply voltages and/or lower load

impedances, the device remains operating with considerable music output power without

the need for an external heat sink.

The device has two full-differential inputs driving two independent outputs. It can be used

as mono full-bridge conﬁguration (BTL) or as stereo half-bridge conﬁguration (SE).

2. Features

n Operating voltage from 10 V to 36 V asymmetrical or ±5 V to ±18 V symmetrical

n Mono-bridged tied load (full-bridge) or stereo single-ended (half-bridge) application

n Application without heatsink using thermally enhanced small outline package

n High efﬁciency and low-power dissipation

n Thermally protected and thermal foldback

n Current limiting to avoid audio holes

n Full short-circuit proof across load and to supply lines (using advanced current

protection)

n Switchable internal or external oscillator (master-slave setting)

n No pop noise

n Full-differential inputs

3. Applications

n Flat panel television sets

n Flat panel monitor sets

n Multimedia systems

n Wireless speakers

n Mini and micro systems

n Home sound sets

TDA8932B

Class-D audio ampliﬁer

Rev. 03 — 21 June 2007 Product data sheet

Summary of content (48 pages)

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TDA8932B Class-D audio amplifier Rev. 03 — 21 June 2007 Product data sheet 1. General description The TDA8932B is a high efficiency class-D amplifier with low power dissipation. The continuous time output power is 2 × 15 W in stereo half-bridge application (RL = 4 Ω) or 1 × 30 W in mono full-bridge application (RL = 8 Ω). Due to the low power dissipation the device can be used without any external heat sink when playing music.
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TDA8932B NXP Semiconductors Class-D audio amplifier 4. Quick reference data Table 1. Quick reference data VP = 22 V; fosc = 320 kHz; Tamb = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Supplies VP supply voltage asymmetrical supply 10 22 36 V IP supply current Sleep mode - 0.6 1.0 mA Iq(tot) total quiescent current Operating mode; no load, no snubbers and no filter connected - 40 50 mA 13.8 15.3 - W 14.0 15.5 - W 23.8 26.5 - W 15.
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TDA8932B NXP Semiconductors Class-D audio amplifier 6.
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TDA8932B NXP Semiconductors Class-D audio amplifier 7. Pinning information 7.
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TDA8932B NXP Semiconductors Class-D audio amplifier Table 3.
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TDA8932B NXP Semiconductors Class-D audio amplifier 8.2 Mode selection and interfacing The TDA8932B can be switched in three operating modes using pins POWERUP and ENGAGE: • Sleep mode: with low supply current. • Mute mode: the amplifiers are switching idle (50 % duty cycle), but the audio signal at the output is suppressed by disabling the Vl-converter input stages. The capacitors on pins HVP1 and HVP2 have been charged to half the supply voltage (asymmetrical supply only).
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TDA8932B NXP Semiconductors Class-D audio amplifier VP POWERUP DREF HVPREF HVP1, HVP2 ENGAGE 2.0 V (typical) 1.2 V (typical) ≤ 0.8 V AUDIO audio AUDIO AUDIO OUT1, OUT2 PWM PWM PWM DIAG OSCIO operating mute operating fault operating sleep 001aaf885 Fig 4. Start-up sequence 8.3 Pulse width modulation frequency The output signal of the amplifier is a PWM signal with a carrier frequency of approximately 320 kHz.
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TDA8932B NXP Semiconductors Class-D audio amplifier 9 12.45 × 10 f osc = ---------------------------Rosc (1) Where: fosc = oscillator frequency (Hz) Rosc = oscillator resistor (on pin OSCREF) (Ω) 001aad758 550 fosc (kHz) 450 350 250 25 30 35 40 45 Rosc (kΩ) Fig 5. Oscillation frequency as a function of resistor Rosc Table 5 summarizes how to configure the TDA8932B in master or slave configuration. For device synchronization see Section 14.6 “Device synchronization”. Table 5.
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TDA8932B NXP Semiconductors Class-D audio amplifier 8.4.1 Thermal Foldback (TF) If the junction temperature of the TDA8932B exceeds the threshold level (Tj > 140 °C) the gain of the amplifier is decreased gradually to a level where the combination of dissipation (P) and the thermal resistance from junction to ambient [Rth(j-a)] results in a junction temperature around the threshold level. This means that the device will not completely switch off, but remains operational at lower output power levels.
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TDA8932B NXP Semiconductors Class-D audio amplifier • When the amplifier is completely shut down due to activation of the OCP because a short-circuit to one of the supply lines is made, then during restart (after 100 ms) the window protection will be activated. As a result the amplifier will not start until the short-circuit to the supply lines is removed. 8.4.
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TDA8932B NXP Semiconductors Class-D audio amplifier 8.5 Diagnostic input and output Whenever a protection is triggered, except for TF, pin DIAG is activated to LOW level (see Table 6). An internal reference supply will pull-up the open-drain DIAG output to approximately 2.4 V. This internal reference supply can deliver approximately 50 µA. Pin DIAG refers to pin CGND. The diagnostic output signal during different short conditions is illustrated in Figure 6. Using pin DIAG as input, a voltage < 0.
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TDA8932B NXP Semiconductors Class-D audio amplifier • Pins HVP1 and HVP2: The time required for charging the SE capacitor depends on its value. The half supply voltage output is disabled when the TDA8932B is used in a symmetrical supply application. • Pin HVPREF: This output voltage reference buffer charges the capacitor on pin HVPREF. • Pin INREF: This output voltage reference buffer charges the input reference capacitor on pin INREF. Pin INREF applies the bias voltage for the inputs. 9.
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TDA8932B NXP Semiconductors Class-D audio amplifier Table 7. Internal circuitry (Continued) Pin Symbol 5 ENGAGE Equivalent circuit VDDA 2.8 V Iref = 50 µA 2 kΩ ± 20 % 5 100 kΩ ± 20 % VSSA CGND 001aaf608 6 POWERUP VDDA 6 VSSA 7 CGND 001aad788 CGND VDDA 7 VSSA 001aad789 8 VDDA 8 VSSA VSSD 001aad790 TDA8932B_3 Product data sheet © NXP B.V. 21 June 2007. All rights reserved. Rev.
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TDA8932B NXP Semiconductors Class-D audio amplifier Table 7. Internal circuitry (Continued) Pin Symbol 9 VSSA Equivalent circuit VDDA 9 VSSD 001aad791 10 OSCREF VDDA Iref 10 VSSA 11 001aad792 HVPREF VDDA 11 VSSA 13 001aaf604 TEST VDDA 13 VSSA 001aad795 18 DREF VDD 18 VSSD 001aag025 TDA8932B_3 Product data sheet © NXP B.V. 21 June 2007. All rights reserved. Rev.
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TDA8932B NXP Semiconductors Class-D audio amplifier Table 7. Internal circuitry (Continued) Pin Symbol 19 HVP2 30 HVP1 Equivalent circuit VDDA 19, 30 VSSA 20 VDDP2 23 VSSP2 26 VSSP1 29 VDDP1 001aag026 20, 29 23, 26 001aad798 21 BOOT2 28 BOOT1 21, 28 OUT1, OUT2 001aad799 22 OUT2 27 OUT1 VDDP1, VDDP2 22, 27 VSSP1, VSSP2 24 STAB2 25 STAB1 001aag027 VDDA 24, 25 VSSP1, VSSP2 31 001aag028 OSCIO DREF 31 VSSD 001aag029 TDA8932B_3 Product data sheet © NXP B.V.
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TDA8932B NXP Semiconductors Class-D audio amplifier 10. Limiting values Table 8. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit [1] −0.3 +40 V IN1P, IN1N, IN2P, IN2N [2] −5 +5 V OSCREF, OSCIO, TEST [3] VSSD(HW) − 0.3 5 V POWERUP, ENGAGE, DIAG [4] VCGND − 0.3 6 V all other pins [5] VSS − 0.3 VDD + 0.
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TDA8932B NXP Semiconductors Class-D audio amplifier Table 9.
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TDA8932B NXP Semiconductors Class-D audio amplifier Table 10. Static characteristics (Continued) VP = 22 V; fosc = 320 kHz; Tamb = 25 °C; unless otherwise specified. Symbol Parameter Diagnostic output: pin VO Conditions Min Typ Max Unit protection activated; see Table 6 - - 0.8 V Operating mode 2 2.5 3.3 V with respect to pin VSSA - 2.
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TDA8932B NXP Semiconductors Class-D audio amplifier Table 10. Static characteristics (Continued) VP = 22 V; fosc = 320 kHz; Tamb = 25 °C; unless otherwise specified. Symbol Parameter Tact(th_fold) thermal foldback activation temperature Conditions Min Typ Max Unit 140 - 150 °C Oscillator reference; pin OSCIO[2] VIH HIGH-level input voltage 4.0 - 5 V VIL LOW-level input voltage 0 - 0.8 V VOH HIGH-level output voltage 4.0 - 5 V VOL LOW-level output voltage 0 - 0.
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TDA8932B NXP Semiconductors Class-D audio amplifier Table 12. SE characteristics (Continued) VP = 22 V; RL = 2 × 4 Ω; fi = 1 kHz; fosc = 320 kHz; Rs < 0.1 Ω[1]; Tamb = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit CMRR common mode rejection ratio Vi(cm) = 1 V (RMS) - 75 - dB ηpo output power efficiency Po = 15 W VP = 22 V; RL = 4 Ω 90 92 - % VP = 30 V; RL = 8 Ω 91 93 - % THD+N = 0.5 %; fi = 1 kHz 10.9 12.1 - W THD+N = 0.
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TDA8932B NXP Semiconductors Class-D audio amplifier Table 13. BTL characteristics (Continued) VP = 22 V; RL = 8 Ω; fi = 1 kHz; fosc = 320 kHz; Rs < 0.1 Ω[1]; Tamb = 25 °C; unless otherwise specified.
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TDA8932B NXP Semiconductors Class-D audio amplifier 14. Application information 14.1 Output power estimation The output power Po at THD+N = 0.5 %, just before clipping, for the SE and BTL configuration can be estimated using Equation 2 and Equation 3. SE configuration: P o ( 0.
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TDA8932B NXP Semiconductors Class-D audio amplifier 001aad768 40 001aad769 40 Po (W) RL = 4 Ω 30 RL = 4 Ω Po (W) 30 6Ω 6Ω 20 8Ω 20 8Ω 10 10 0 10 20 30 VP (V) 0 40 10 20 30 40 VP (V) a. THD+N = 0.5 % b. THD+N = 10 % Fig 8. SE output power as a function of supply voltage 001aad770 80 001aad771 80 Po (W) RL = 8 Ω Po (W) RL = 8 Ω 60 60 6Ω 6Ω 40 40 4Ω 4Ω 20 20 0 0 10 20 30 40 10 20 VP (V) 30 40 VP (V) a. THD+N = 0.5 % b. THD+N = 10 % Fig 9.
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TDA8932B NXP Semiconductors Class-D audio amplifier 14.2 Output current limiting The peak output current IO(max) is internally limited above a level of 4 A (minimum). During normal operation the output current should not exceed this threshold level of 4 A otherwise the output signal is distorted. The peak output current in SE or BTL configurations can be estimated using Equation 5 and Equation 6. SE configuration: 0.
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TDA8932B NXP Semiconductors Class-D audio amplifier The 3 dB cut-off frequency is equal to: 1 f –3dB = ----------------------------------2π × R L × Cse (7) Where: f-3dB = 3 dB cut-off frequency (Hz) RL = load impedance (Ω) Cse = single-ended capacitance (F); see Figure 36 Table 15 shows an overview of the required SE capacitor values in case of 60 Hz, 40 Hz or 20 Hz 3 dB cut-off frequency. Table 15.
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TDA8932B NXP Semiconductors Class-D audio amplifier R3 × Z R EQ = ------------------i R3 + Z i (9) Where: REQ = equivalent resistance (Ω) R3 = parallel resistor (Ω) Zi = internal input impedance (Ω) Example: Substituting R1 = R2 = 4.7 kΩ, Zi = 100 kΩ and R3 = 22 kΩ in Equation 8 and Equation 9 results in a gain of Gv(tot) = 26.3 dB. 14.
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TDA8932B NXP Semiconductors Class-D audio amplifier The HTSSOP32 package has an exposed die-pad that reduces significantly the overall Rth(j-a). Therefore it is required to solder the exposed die-pad (at VSSD level) to a copper plane for cooling. The HTSSOP package will have a low thermal resistance when used on a multi-layer PCB with sufficient space for one or two thermal planes.
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TDA8932B NXP Semiconductors Class-D audio amplifier IN1P audio in1 OUT1 IN1N IN2N audio in2 OUT2 IN2P 001aad763 Fig 12. SE application for reducing pumping effects TDA8932B_3 Product data sheet © NXP B.V. 21 June 2007. All rights reserved. Rev.
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TDA8932B NXP Semiconductors Class-D audio amplifier 14.9 SE curves measured in reference design 001aad772 102 THD+N (%) 10 10 1 1 10−1 001aad773 102 THD+N (%) (1) 10−1 (1) (2) (2) (3) 10−2 10−3 10−2 10−1 1 10−2 10 102 Po (W/channel) a. VP = 22 V; RL = 2 × 4 Ω (3) 10−3 10−2 10−1 1 10 102 Po (W/channel) b. VP = 30 V; RL = 2 × 8 Ω (1) fi = 6 kHz (2) fi = 100 Hz (3) fi = 1 kHz Fig 13.
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TDA8932B NXP Semiconductors Class-D audio amplifier 001aad776 40 001aad777 0 SVRR (dB) Gv (dB) −20 30 −40 (1) (1) −60 (2) (2) 20 −80 10 10 102 103 104 105 −100 10 102 103 104 105 fi (Hz) fi (Hz) Vi = 100 mV (RMS); Ri = 0 Ω; Cse = 1000 µF Vripple = 500 mV (RMS) referenced to ground; Ri = 0 Ω (shorted input) (1) VP = 30 V; RL = 2 × 8 Ω (1) VP = 30 V; RL = 2 × 8 Ω (2) VP = 22 V; RL = 2 × 4 Ω (2) VP = 22 V; RL = 2 × 4 Ω Fig 15. Gain as a function of frequency Fig 16.
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TDA8932B NXP Semiconductors Class-D audio amplifier 001aaf886 32 Po (W/channel) (1) 24 001aaf889 6 P (W) (2) (1) 4 16 (3) (4) 2 (2) 8 0 0 10 14 18 22 26 30 10 34 38 VP (V) fi = 1 kHz (short time PO); dashed line will require heat sink for continuous time output power (1) RL = 2 × 4 Ω; THD+N = 10 % 14 18 22 26 30 34 38 VP (V) fi = 1 kHz; power dissipation in junction only; short time Po at THD+N = 10 %; dashed line will require heat sink for continuous time output power (1) R
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TDA8932B NXP Semiconductors Class-D audio amplifier 001aaf887 32 Po (W/channel) Po (W/channel) (3) 24 001aaf888 32 24 (2) (2) 16 16 (1) (1) 8 8 0 0 0 120 240 360 480 600 0 120 240 360 480 t (s) 600 t (s) a. RL = 2 × 4 Ω; fi = 1 kHz; 2 layer SO32 application board (55 mm × 45 mm) without heat sink b. RL = 2 × 8 Ω; fi = 1 kHz; 2 layer SO32 application board (55 mm × 45 mm) without heat sink (1) VP = 22 V (1) VP = 30 V (2) VP = 26 V (2) VP = 34 V (3) VP = 29 V Fig 23.
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TDA8932B NXP Semiconductors Class-D audio amplifier 14.10 BTL curves measured in reference design 001aad782 102 THD+N (%) 10 10 1 1 (1) 10−1 001aad783 102 THD+N (%) 10−1 (1) (2) (3) 10−2 10−2 (2) (3) 10−3 10−2 10−1 1 102 10 10−3 10−2 10−1 1 102 10 Po (W) Po (W) a. VP = 12 V; RL = 4 Ω b. VP = 22 V; RL = 8 Ω (1) fi = 6 kHz (2) fi = 1 kHz (3) fi = 100 Hz Fig 26.
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TDA8932B NXP Semiconductors Class-D audio amplifier 001aae116 40 001aae117 0 SVRR (dB) Gv (dB) (2) −20 (1) 30 −40 −60 20 (1) −80 10 10 102 103 104 105 (2) −100 102 10 103 104 105 fi (Hz) fi (Hz) Vi = 100 mV (RMS); Ri = 0 Ω Vripple = 500 mV (RMS) referenced to ground; Ri = 0 Ω (shorted input) (1) VP = 12 V; RL = 4 Ω (1) VP = 22 V; RL = 8 Ω (2) VP = 22 V; RL = 8 Ω (2) VP = 12 V; RL = 4 Ω Fig 28. Gain as a function of frequency Fig 29.
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TDA8932B NXP Semiconductors Class-D audio amplifier 001aaf896 32 001aaf899 60 (3) Po (W) 50 (2) 40 (1) 30 Po (W) (3) 24 16 (2) (1) 20 8 10 0 0 0 120 240 360 480 600 0 120 240 360 480 t (s) 600 t (s) a. RL = 4 Ω; fi = 1 kHz; 2 layer SO32 application board (55 mm × 45 mm) without heat sink b. RL = 8 Ω; fi = 1 kHz; 2 layer SO32 application board (55 mm × 45 mm) without heat sink (1) VP = 12 V (1) VP = 22 V (2) VP = 13.
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TDA8932B NXP Semiconductors Class-D audio amplifier 001aaf904 6 P (W) 4 (2) (1) 2 0 10 14 18 22 26 30 34 VP (V) fi = 1 kHz; power dissipation in junction only; short time Po at THD+N = 10 %; dashed line will require heat sink for continuous time output power (1) RL = 4 Ω (2) RL = 8 Ω Fig 35. Power dissipation as a function of supply voltage TDA8932B_3 Product data sheet © NXP B.V. 21 June 2007. All rights reserved. Rev.
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TDA8932B NXP Semiconductors Class-D audio amplifier 14.
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TDA8932B NXP Semiconductors Class-D audio amplifier VP Rvdda VP 10 Ω VPA Cvdda 100 nF Cvddp 220 µF (35 V) GND VSSD(HW) Cin Cin IN1P 1 µF IN1N 1 µF DIAG MUTE control ENGAGE Cen 470 nF POWERUP CGND SLEEP control Cosc VDDA VPA VSSA 100 nF Rosc OSCREF 39 kΩ HVPREF INREF Chvp 100 nF Cinref 100 nF TEST IN2N IN2P VSSD(HW) 1 32 2 31 3 30 4 29 5 28 6 27 7 26 8 9 10 Rhvp 470 Ω OSCIO VP VDDP1 BOOT1 OUT1 Cvddp 100 nF Cbo 15 nF VSSP1 Rsn 10 Ω 12 21 20 14 19 15 18
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TDA8932B NXP Semiconductors Class-D audio amplifier VDD Rvdda VDD VDDA 10 Ω Cvdda 100 nF Cvddp 220 µF (25 V) Cvssa 100 nF Cvssp 220 µF (25 V) GND Rvssa VSS VSSA 10 Ω VSS VSSD(HW) VSSA 1 Cin IN1P 470 nF Cin IN1N 470 nF DIAG ENGAGE MUTE control Cen 470 nF POWERUP CGND SLEEP control Cosc VSSA 100 nF Rosc VDDA VDDA VSSA VSSA OSCREF 39 kΩ HVPREF INREF Cinref 100 nF Cin 470 nF TEST IN2N 32 2 31 3 30 4 29 5 28 6 27 7 26 8 9 VSSA OSCIO HVP1 VDD VDDP1 BOOT1 OUT1 V
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TDA8932B NXP Semiconductors Class-D audio amplifier VDD Rvdda VDD 10 Ω VDDA Cvdda 100 nF Cvddp 220 µF (25 V) Cvssa 100 nF Cvssp 220 µF (25 V) GND Rvssa VSS VSSA 10 Ω VSS VSSA VSSD(HW) Cin Cin IN1P 1 µF IN1N 1 µF DIAG ENGAGE MUTE control Cen 470 nF POWERUP CGND SLEEP control Cosc 100 nF VDDA VDDA VSSA VSSA Rosc OSCREF VSSA 39 kΩ HVPREF INREF Cinref 100 nF TEST IN2N IN2P VSSA VSSD(HW) 1 32 2 31 3 30 4 29 5 28 6 27 7 26 8 9 HVP1 VDD VDDP1 BOOT1 OUT1 VSSP1
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TDA8932B NXP Semiconductors Class-D audio amplifier 16. Package outline SO32: plastic small outline package; 32 leads; body width 7.5 mm SOT287-1 D E A X c y HE v M A Z 17 32 Q A2 A (A 3) A1 pin 1 index θ Lp L 16 1 0 detail X w M bp e 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 2.65 0.3 0.1 2.45 2.25 0.25 0.49 0.36 0.27 0.18 20.7 20.3 7.6 7.4 1.
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TDA8932B NXP Semiconductors Class-D audio amplifier HTSSOP32: plastic thermal enhanced thin shrink small outline package; 32 leads; body width 6.1 mm; lead pitch 0.65 mm; exposed die pad SOT549-1 E D A X c y HE exposed die pad side v M A Dh Z 32 17 A2 Eh (A3) A A1 pin 1 index θ Lp L detail X 16 1 w M bp e 2.5 0 5 mm scale DIMENSIONS (mm are the original dimensions). UNIT A max. A1 A2 A3 bp c D(1) Dh E(2) Eh e HE L Lp v w y Z θ mm 1.1 0.15 0.05 0.95 0.
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TDA8932B NXP Semiconductors Class-D audio amplifier 17. Soldering This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 17.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits.
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TDA8932B NXP Semiconductors Class-D audio amplifier 17.
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TDA8932B NXP Semiconductors Class-D audio amplifier maximum peak temperature = MSL limit, damage level temperature minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 42. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. 18. Abbreviations Table 18.
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TDA8932B NXP Semiconductors Class-D audio amplifier 19. Revision history Table 19. Revision history Document ID Release date Data sheet status Change notice Supersedes TDA8932B_3 20070621 Product data sheet - TDA8932B_2 Modifications: • Status upgraded to Product data sheet TDA8932B_2 20070329 Preliminary data sheet - TDA8932B_1 TDA8932B_1 20070214 Objective data sheet - - TDA8932B_3 Product data sheet © NXP B.V. 21 June 2007. All rights reserved. Rev.
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TDA8932B NXP Semiconductors Class-D audio amplifier 20. Legal information 20.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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TDA8932B NXP Semiconductors Class-D audio amplifier 22. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 8.4.1 8.4.2 8.4.3 8.4.4 8.4.5 8.5 8.6 8.7 9 10 11 12 13 14 14.1 14.2 14.3 14.4 14.5 14.6 14.7 14.8 14.9 14.10 14.11 15 15.1 16 17 17.1 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . .