Datasheet

2004 July 12 16
Philips Semiconductors Product specification
IC card interface TDA8024
9 LIMITING VALUES
Notes
1. All card contacts are protected against any short-circuit with any other card contact.
2. Every pin withstands the ESD test according to MIL-STD-883C class 3 for card contacts, class 2 for the remaining.
Method 3015 (HBM; 1500 Ω and 100 pF) 3 pulses positive and 3 pulses negative on each pin referenced to ground.
3. In accordance with EIA/JESD22-A114-B, June 2000.
4. In accordance with EIA/JESD22-A115-A, October 1997.
10 HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However it is good practice to take
normal precautions appropriate to handling MOS devices (see “Handling MOS devices” ).
11 THERMAL CHARACTERISTICS
Note
1. This figure was obtained using the following PCB technology: FR, 4 layers, 0.5 mm thickness, class 5, copper
thickness 35 µm, Ni/Go plating, ground plane in internal layers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DD
supply voltage −0.3 +6.5 V
V
DDP
DC/DC converter supply voltage −0.3 +6.5 V
V
I
, V
O
voltage on input and output pins pins XTAL1, XTAL2, 5V/3V, RSTIN,
AUX1UC, AUX2UC, I/OUC,
CLKDIV1, CLKDIV2, CMDVCC, OFF
and PORADJ
−0.3 +6.5 V
V
card
voltage on card pins pins PRES, PRES, I/O, RST, AUX1,
AUX2 and CLK
−0.3 +6.5 V
V
n
voltage on other pins pins V
UP
, S1 and S2 −0.3 +6.5 V
T
j(max)
maximum junction temperature − 150 °C
T
stg
storage temperature −55 +150 °C
V
esd
electrostatic discharge voltage card contacts in typical application;
notes 1 and 2
pins I/O, RST, V
CC
, AUX1, AUX2,
CLK, PRES and PRES
−6+6kV
all pins; note 1
human body model; notes 2 and 3 −2+2kV
machine model; note 4 −200 +200 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction
to ambient
in free air
TDA8024T 70 K/W
TDA8024AT 70 K/W
TDA8024TT 100
(1)
K/W