Datasheet

TDA8023_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 16 July 2007 20 of 32
NXP Semiconductors
TDA8023
Low power IC card interface
[1] Two ceramic multilayer capacitors of minimum 100 nF with low Equivalent Series Resistance (ESR) should be used in order to meet
these specifications.
[2] Output voltage towards the card, including ripple.
[3] Pin I/O has an internal 15 kΩ pull-up resistor to V
CC
.
[4] Pin I/OUC has an internal 11 kΩ pull-up resistor to V
DD(INTF)
.
I
pu
pull-up current at pin I/O; V
OH
= 0.9V
CC
; C
L
= 30 pF
[3]
−1-- mA
t
d
delay time between edges on pin I/O and pin
I/OUC; corresponds to width of active
pull-up pulse
[3][4]
- 500 650 ns
t
r
rise time inputs; from V
IL(max)
to V
IH(min)
- - 1.5 µs
t
TLH
clock rise time output transition time; from 10 % of V
CC
to 90 % of V
CC
; C
L
< 30 pF; no DC load
- - 0.1 µs
C
i
input capacitance on pin I/O
[3]
- - 10 pF
R
pu(int)
internal pull-up
resistance
between pin I/O and V
CC
[3]
10 13.5 17 kΩ
f
max
maximum input clock
frequency
on pin I/O
[3]
- - 500 kHz
Card presence input: pin PRES, active-HIGH when pin SPRES = LOW or active-LOW when pin SPRES = HIGH
V
IL
LOW-level input voltage - - 0.3V
DD
V
V
IH
HIGH-level input voltage 0.7V
DD
-- V
I
LIL
LOW-level input leakage
current
V
I
= 0.3V
DD
; pin SPRES = HIGH 0 - 5 µA
V
I
= 0.3V
DD
; pin SPRES = LOW 10 - 40 µA
I
LIH
HIGH-level input
leakage current
V
I
= 0.7V
DD
; pin SPRES = HIGH −40 - −10 µA
V
I
= 0.7V
DD
; pin SPRES = LOW −5-0 µA
Table 18. Card drivers
…continued
V
DD
= 3.3 V; V
DD(INTF)
= 1.5 V; f
CLKIN
= 10 MHz; GND = 0 V; T
amb
= 25 ° C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Table 19. Sequencer and clock counter
V
DD
= 3.3 V; V
DD(INTF)
= 1.5 V; f
CLKIN
= 10 MHz; GND = 0 V; T
amb
= 25 ° C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
t
act
activation time total sequence - - 135 µs
t
deact
deactivation time total sequence 60 80 100 µs
Table 20. Interface signals to host controller
V
DD
= 3.3 V; V
DD(INTF)
= 1.5 V; f
CLKIN
= 10 MHz; GND = 0 V; T
amb
= 25 ° C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Data line: pin I/OUC
[1]
V
OL
LOW-level output voltage I
OL
= 1 mA 0 - 0.3 V
V
OH
HIGH-level output voltage no DC load 0.9V
DD(INTF)
-V
DD(INTF)
+ 0.2 V
I
OH
< −10 µA 0.75V
DD(INTF)
-V
DD(INTF)
+ 0.2 V
V
IL
LOW-level input voltage −0.3 - 0.25V
DD(INTF)
V
V
IH
HIGH-level input voltage 0.7V
DD(INTF)
-V
DD(INTF)
+ 0.3 V
I
IL
LOW-level input current V
IL
= 0 V - - 600 µA
I
LIH
HIGH-level input leakage
current
V
IH
= V
DD(INTF)
--10 µA