Datasheet

PXTA92 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 27 September 2011 3 of 9
NXP Semiconductors
PXTA92
300 V, 100 mA PNP high-voltage transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
7. Characteristics
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--96K/W
R
th(j-sp)
thermal resistance from
junction to solder point
--16K/W
Table 7. Characteristics
T
amb
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= 200 V; I
E
=0A - - 250 nA
I
EBO
emitter-base cut-off
current
V
EB
= 3V; I
C
=0A - - 100 nA
h
FE
DC current gain V
CE
= 10 V; I
C
= 1mA 25 - -
V
CE
= 10 V;
I
C
= 10 mA
40 - -
V
CE
= 10 V;
I
C
= 30 mA
25 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 20 mA; I
B
= 2mA - - 500 mV
V
BEsat
base-emitter
saturation voltage
I
C
= 20 mA; I
B
= 2mA - - 900 mV
f
T
transition frequency V
CE
= 20 V;
I
C
= 10 mA;
f = 100 MHz
50 - - MHz
C
c
collector capacitance V
CB
= 20 V;
I
E
=i
e
=0A; f=1MHz
--6pF