DISCRETE SEMICONDUCTORS DATA SHEET ‘ dbook, halfpage M3D109 PXT4401 NPN switching transistor Product data sheet Supersedes data of 1999 Apr 14 2004 Nov 22
NXP Semiconductors Product data sheet NPN switching transistor PXT4401 FEATURES PINNING • High current (max. 600 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Switching and linear amplification in industrial and consumer applications. DESCRIPTION 2 NPN switching transistor in a SOT89 plastic package. PNP complement: PXT4403. 3 3 MARKING 2 1 1 sym042 MARKING CODE(1) TYPE NUMBER PXT4401 *2X Fig.1 Simplified outline (SOT89) and symbol.
NXP Semiconductors Product data sheet NPN switching transistor PXT4401 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet NPN switching transistor PXT4401 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT note 1 250 K/W note 2 156 K/W note 3 113 K/W 30 K/W in free air thermal resistance from junction to soldering point Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2.
NXP Semiconductors Product data sheet NPN switching transistor PXT4401 006aaa236 103 Zth (K/W) (1) 102 (2) (3) (4) (5) (6) 10 (7) (8) (9) (10) 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values.
NXP Semiconductors Product data sheet NPN switching transistor PXT4401 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current IE = 0 A; VCB = 60 V − 50 nA IEBO emitter-base cut-off current IC = 0 A; VEB = 6 V − 50 nA hFE DC current gain VCE = 1 V; (see Fig.6) 20 − IC = 0.
NXP Semiconductors Product data sheet NPN switching transistor PXT4401 MGD811 300 handbook, full pagewidth hFE VCE = 1 V 200 100 0 10−1 1 102 10 Fig.6 DC current gain; typical values. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.
NXP Semiconductors Product data sheet NPN switching transistor PXT4401 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.
NXP Semiconductors Product data sheet NPN switching transistor PXT4401 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
