Datasheet

NXP Semiconductors
PXT2907A
60 V, 600 mA, PNP switching transistor
PXT2907A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 10 October 2014 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -60 V
V
CEO
collector-emitter voltage open base - -60 V
V
EBO
emitter-base voltage open collector - -5 V
I
C
collector current - -600 mA
I
CM
peak collector current - -800 mA
I
BM
peak base current
single pulse; t
p
≤ 1 ms
- -200 mA
[1] - 0.5 W
[2] - 0.8 W
P
tot
total power dissipation T
amb
≤ 25 °C
[3] - 1.1 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -65 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
T
amb
(°C)
- 75 17512525 75- 25
006aaa238
800
400
1200
1600
P
tot
(mW)
0
(1)
(2)
(3)
(1) FR4 PCB; 6 cm
2
mounting pad for collector.
(2) FR4 PCB; 1 cm
2
mounting pad for collector.
(3) FR4 PCB; standard footprint.
Fig. 1. Power derating curves