Datasheet

NXP Semiconductors
PXT2222A
NPN switching transistors
PXT2222A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 2 April 2014 2 / 15
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PXT2222A SOT89 plastic surface-mounted package; die pad for good heat transfer;
3 leads
SOT89
7. Marking
Table 4. Marking codes
Type number Marking code
[1]
PXT2222A %1P
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 40 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 600 mA
I
CM
peak collector current - 800 mA
I
BM
peak base current
t
p
≤ 1 ms; single pulse
- 200 mA
[1] - 0.5 W
[2] - 0.8 W
P
tot
total power dissipation T
amb
≤ 25 °C
[3] - 1.1 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -65 150 °C
T
stg
storage temperature -65 150 °C
[1] Transistor mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Transistor mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
[3]
Transistor mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.