Datasheet

PEMD9_PUMD9 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 22 November 2011 9 of 16
NXP Semiconductors
PEMD9; PUMD9
NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k
V
CE
= 0.3 V
(1) T
amb
= 40 C
(2) T
amb
=25C
(3) T
amb
= 100 C
V
CE
= 5V
(1) T
amb
= 40 C
(2) T
amb
=25C
(3) T
amb
= 100 C
Fig 12. TR2 (PNP): On-state input voltage as a
function of collector current; typical values
Fig 13. TR2 (PNP): Off-state input voltage as a
function of collector current; typical values
f=1MHz; T
amb
=25CV
CE
= 5V; T
amb
=25C
Fig 14. TR2 (PNP): Collector capacitance as a function
of collector-base voltage; typical values
Fig 15. TR2 (PNP): Transition frequency as a function
of collector current; typical values of built-in
transistor
006aac791
I
C
(mA)
-10
-1
-10
2
-10-1
-1
-10
V
I(on)
(V)
-10
-1
(1)
(2)
(3)
I
C
(mA)
-10
-1
-10-1
006aac792
-1
-10
V
I(off)
(V)
-10
-1
(1)
(2)
(3)
V
CB
(V)
0 -50-40-20 -30-10
006aac793
7
C
c
(pF)
5
3
1
0
2
4
6
006aac763
I
C
(mA)
-10
-1
-10
2
-10-1
10
2
10
3
f
T
(MHz)
10