Datasheet

2004 Apr 07 4
NXP Semiconductors Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMD6; PUMD6
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
CHARACTERISTICS
T
amb
= 25 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per transistor
R
th(j-a)
thermal resistance from junction to
ambient
note 1
SOT363 625 K/W
SOT666 625 K/W
Per device
R
th(j-a)
thermal resistance from junction to
ambient
note 1
SOT363 416 K/W
SOT666 416 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
= 0 − − 100 nA
I
CEO
collector-emitter cut-off current V
CE
= 30 V; I
B
= 0 − − 1 μA
V
CE
= 30 V; I
B
= 0; T
j
= 150 °C − − 50 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 − − 100 nA
h
FE
DC current gain V
CE
= 5 V; I
C
= 1 mA 200 − −
V
CEsat
collector-emitter saturation voltage I
C
= 5 mA; I
B
= 0.25 mA − − 100 mV
R1 input resistor 3.3 4.7 6.1 kΩ
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz
TR1 (NPN) − − 2.5 pF
TR2 (PNP) − − 3 pF