Datasheet

2004 Apr 07 3
NXP Semiconductors Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMD6; PUMD6
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PEMD6 − plastic surface mounted package; 6 leads SOT666
PUMD6 − plastic surface mounted package; 6 leads SOT363
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
collector-base voltage open emitter − 50 V
V
CEO
collector-emitter voltage open base − 50 V
V
EBO
emitter-base voltage open collector − 5 V
I
O
output current (DC) − 100 mA
I
CM
peak collector current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1
SOT363 note 1 − 200 mW
SOT666 notes 1 and 2 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
amb
≤ 25 °C; note 1
SOT363 note 1 − 300 mW
SOT666 notes 1 and 2 − 300 mW