Datasheet

2004 Apr 07 2
NXP Semiconductors Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PEMD6; PUMD6
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement of general purpose transistors in digital
applications
• Control of IC inputs.
DESCRIPTION
NPN/PNP resistor-equipped transistors (see
“_Data_Sheet_Remark Supersedes data of 2003 Nov 04”
for package details).
QUICK REFERENCE DATA
SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
collector-emitter
voltage
− 50 V
I
O
output current (DC) − 100 mA
TR1 NPN − − −
TR2 PNP − − −
R1 bias resistor 4.7 − kΩ
R2 open − − −
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
PACKAGE
MARKING CODE
NPN/NPN
COMPLEMENT
PNP/PNP
COMPLEMENT
PHILIPS EIAJ
PEMD6 SOT666 − D6 PEMH7 PEMB3
PUMD6 SOT363 SC-88 D*6
(1)
PUMH7 PUMB3
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PINNING
PIN DESCRIPTION
PEMD6; PUMD6 1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
handbook, halfpage
MHC028
123
46
5
Top view
654
123
TR1
TR2
R1
R1