Datasheet
PEMD48_PUMD48 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 6 — 24 January 2012 6 of 16
NXP Semiconductors
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
7. Characteristics
[1] Characteristics of built-in transistor.
Table 8. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base
cut-off current
V
CB
=50V; I
E
=0A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
=0A - - 1 A
V
CE
=30V; I
B
=0A;
T
j
=150C
--5A
Transistor TR1 (NPN)
I
EBO
emitter-base
cut-off current
V
EB
=5V; I
C
=0A - - 90 A
h
FE
DC current gain V
CE
=5V; I
C
=5mA 80 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA; I
B
=0.5mA - - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
=100A-1.20.8V
V
I(on)
on-state input voltage V
CE
=0.3V; I
C
=2mA 3 1.6 - V
R1 bias resistor 1 (input) 33 47 61 k
R2/R1 bias resistor ratio 0.8 1.0 1.2
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
--2.5pF
f
T
transition frequency V
CB
=5V; I
C
=10mA;
f=100MHz
[1]
-230-MHz
Transistor TR2 (PNP)
I
EBO
emitter-base
cut-off current
V
EB
= 5V; I
C
=0A - - 180 A
h
FE
DC current gain V
CE
= 5V; I
C
= 10 mA 100 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 5mA; I
B
= 0.25 mA - - 100 mV
V
I(off)
off-state input voltage V
CE
= 5V; I
C
= 100 A- 0.6 0.5 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 5mA 1.1 0.75 - V
R1 bias resistor 1 (input) 1.54 2.20 2.86 k
R2/R1 bias resistor ratio 17 21 26
C
c
collector capacitance V
CB
= 10 V; I
E
=i
e
=0A;
f=1MHz
--3pF
f
T
transition frequency V
CB
=-5V; I
C
=-10mA;
f=100MHz
[1]
-180-MHz