Datasheet

2003 Oct 10 4
NXP Semiconductors Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
PEMD4; PUMD4
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per transistor
R
th j-a
thermal resistance from junction to ambient T
amb
≤ 25 °C
SOT363 note 1 625 K/W
SOT666 notes 1 and 2 625 K/W
Per device
R
th j-a
thermal resistance from junction to ambient T
amb
≤ 25 °C
SOT363 note 1 416 K/W
SOT666 notes 1 and 2 416 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
= 0 − − 100 nA
I
CEO
collector-emitter cut-off current V
CE
= 30 V; I
B
= 0 − − 1 μA
V
CE
= 30 V; I
B
= 0; T
j
= 150 °C − − 50 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 − − 100 nA
h
FE
DC current gain V
CE
= 5 V; I
C
= 1 mA 200 − −
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA − − 150 mV
R1 input resistor 7 10 13 kΩ
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
TR1 (NPN) − − 2.5 pF
TR2 (PNP) − − 3 pF