Datasheet

2003 Oct 10 2
NXP Semiconductors Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
PEMD4; PUMD4
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement for general purpose transistors in digital
applications
• Control of IC inputs.
QUICK REFERENCE DATA
DESCRIPTION
NPN/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
collector-emitter
voltage
− 50 V
I
O
output current (DC) − 100 mA
TR1 NPN − − −
TR2 PNP − − −
R1 bias resistor 10 − kΩ
R2 open − − −
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE
NUMBER
PACKAGE
MARKING CODE
PNP/PNP
COMPLEMENT
NPN/NPN
COMPLEMENT
PHILIPS EIAJ
PEMD4 SOT666 23 PEMB4 PEMH4
PUMD4 SOT363 SC-88 D*4 PUMB4 PUMH4
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PINNING
PIN DESCRIPTION
PEMD4 1 emitter TR1
PUMD4 2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
handbook, halfpage
123
46
5
Top view
654
123
TR1
TR2
R1
R1
MDB814