Datasheet

PEMD3_PIMD3_PUMD3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 11 — 25 September 2013 9 of 18
NXP Semiconductors
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors
f = 1 MHz; T
amb
=25CV
CE
=5V; T
amb
=25C
Fig 9. TR1 (NPN): Collector capacitance as a function
of collector-base voltage; typical values
Fig 10. TR1 (NPN): Transition frequency as a function
of collector current; typical values of built-in
transistor
V
CE
= 5V
(1) T
amb
= 100 C
(2) T
amb
=25C
(3) T
amb
= 40 C
I
C
/I
B
=20
(1) T
amb
= 100 C
(2) T
amb
=25C
(3) T
amb
= 40 C
Fig 11. TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 12. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
V
CB
(V)
0504020 3010
006aac772
1
2
3
C
c
(pF)
0
006aac757
I
C
(mA)
10
-1
10
2
101
10
2
10
3
f
T
(MHz)
10
I
C
(mA)
-10
-1
-10
2
-10-1
006aac773
10
2
10
10
3
h
FE
1
(1)
(2)
(3)
I
C
(mA)
-1 -10
2
-10
006aac774
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(2)
(3)