Datasheet

PEMD3_PIMD3_PUMD3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 11 — 25 September 2013 10 of 18
NXP Semiconductors
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors
V
CE
= 0.3 V
(1) T
amb
= 40 C
(2) T
amb
=25C
(3) T
amb
= 100 C
V
CE
= 5V
(1) T
amb
= 40 C
(2) T
amb
=25C
(3) T
amb
= 100 C
Fig 13. TR2 (PNP): On-state input voltage as a
function of collector current; typical values
Fig 14. TR2 (PNP): Off-state input voltage as a
function of collector current; typical values
f = 1 MHz; T
amb
=25CV
CE
= 5V; T
amb
=25C
Fig 15. TR2 (PNP): Collector capacitance as a function
of collector-base voltage; typical values
Fig 16. TR2 (PNP): Transition frequency as a function
of collector current; typical values of built-in
transistor
006aac775
I
C
(mA)
-10
-1
-10
2
-10-1
-1
-10
V
I(on)
(V)
-10
-1
(1)
(2)
(3)
I
C
(mA)
-10
-1
-10-1
006aac776
-1
-10
V
I(off)
(V)
-10
-1
(1)
(2)
(3)
V
CB
(V)
0 -50-40-20 -30-10
006aac777
2
4
6
C
c
(pF)
0
006aac763
I
C
(mA)
-10
-1
-10
2
-10-1
10
2
10
3
f
T
(MHz)
10