Datasheet
PEMD16_PUMD16 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 June 2011 4 of 11
NXP Semiconductors
PEMD16; PUMD16
NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
- - 625 K/W
SOT666
[1][2]
- - 625 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
- - 416 K/W
SOT666
[1][2]
- - 416 K/W
Table 8. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
=0A - - 1 A
V
CE
=30V; I
B
=0A;
T
j
= 150 C
--50A
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
=0A - - 120 A
h
FE
DC current gain V
CE
=5V; I
C
=5mA 80 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA; I
B
=0.5mA - - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
=100A- 0.80.5V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
=2mA 2 1.1 - V
R1 bias resistor 1 (input) 15.4 22 28.6 k
R2/R1 bias resistor ratio 1.7 2.1 2.6
C
c
collector capacitance V
CB
= 10 V;
I
E
=i
e
=0A; f=1MHz
TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF