Datasheet

PEMD15_PUMD15 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 19 December 2011 6 of 16
NXP Semiconductors
PEMD15; PUMD15
NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k
7. Characteristics
[1] Characteristics of built-in transistor
Table 8. Characteristics
T
amb
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor (TR2) with negative polarity
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter cut-off
current
V
CE
=30V; I
B
=0A - - 1 A
V
CE
=30V; I
B
=0A;
T
j
= 150 C
--5A
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
=0A - - 900 A
h
FE
DC current gain V
CE
=5V; I
C
=10mA 30 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA; I
B
=0.5mA - - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
= 100 A- 1.10.5V
V
I(on)
on-state input voltage V
CE
=0.3V; I
C
=20mA 2.5 1.9 - V
R1 bias resistor 1 (input) 3.3 4.7 6.1 k
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF
f
T
transition frequency V
CE
=5V; I
C
=10mA;
f=100MHz
[1]
TR1 (NPN) - 230 - MHz
TR2 (PNP) - 180 - MHz