Datasheet

PEMD12_PUMD12 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 21 November 2011 8 of 16
NXP Semiconductors
PEMD12; PUMD12
NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k
f=1MHz; T
amb
=25CV
CE
=5V; T
amb
=25C
Fig 8. TR1 (NPN): Collector capacitance as a function
of collector-base voltage; typical values
Fig 9. TR1 (NPN): Transition frequency as a function
of collector current; typical values of built-in
transistor
V
CE
= 5V
(1) T
amb
= 100 C
(2) T
amb
=25C
(3) T
amb
= 40 C
I
C
/I
B
=20
(1) T
amb
= 100 C
(2) T
amb
=25C
(3) T
amb
= 40 C
Fig 10. TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 11. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
V
CB
(V)
0504020 3010
006aac756
0.8
1.2
0.4
1.6
2.0
C
c
(pF)
0.0
006aac757
I
C
(mA)
10
-1
10
2
101
10
2
10
3
f
T
(MHz)
10
I
C
(mA)
-10
-1
-10
2
-10-1
006aac758
10
2
10
10
3
h
FE
1
(1)
(2)
(3)
006aac759
I
C
(mA)
-10
-1
-10
2
-10-1
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(2)
(3)