Datasheet
PEMD10_PUMD10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 6 — 4 January 2012 6 of 16
NXP Semiconductors
PEMD10; PUMD10
NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
7. Characteristics
[1] Characteristics of built-in transistor.
Table 8. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor (TR2) with negative polarity
I
CBO
collector-base
cut-off current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
= 0 A - - 100 nA
V
CE
=30V; I
B
=0A;
T
j
= 150 C
--5A
I
EBO
emitter-base
cut-off current
V
EB
=5V; I
C
= 0 A - - 180 A
h
FE
DC current gain V
CE
=5V; I
C
= 10 mA 100 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=5mA; I
B
= 0.25 mA - - 100 mV
V
I(off)
off-state input
voltage
V
CE
=5V; I
C
=100A-0.60.5V
V
I(on)
on-state input
voltage
V
CE
= 0.3 V; I
C
=5mA 1.1 0.75 - V
R1 bias resistor 1 (input) 1.54 2.20 2.86 k
R2/R1 bias resistor ratio 17 21 26
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF
f
T
transition frequency V
CB
=5V; I
C
=10mA;
f = 100 MHz
[1]
TR1 (NPN) - 230 - MHz
TR2 (PNP) - 180 - MHz